ABB Semiconductors, Switzerland, is a world class manufacturer of large area / high voltage power semiconductors.

Over 100-years ago our journey into power electronics started in Switzerland with the production of mercury-arc rectifiers. Today, we offer one of the most diverse semiconductor offerings including thyristors, diodes, GTOs, IGCTs and IGBTs, manufactured at our Lenzburg, Switzerland and Prague, Czech Republic facilities.

With our research team we are developing the next generation power semiconductors and are set to continue pushing the boundaries of power electronics innovation.

Our advanced semiconductor technology has created almost unlimited control possibilities in HVDC transmission systems. We lie at the heart of traction converters driving high speed trains, metros and diesel-electric locomotives. And the many pumps, fans, roller tables, hoist and winches found through-out industry, rely on us.

In future we are powering the next generation of e-vehicles enabling people to enjoy greener mobility. We are Hitachi ABB Power Grids – Semiconductors. And, together with you, we can shape the future of a smarter and greener society.

IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.

The IGCT's turn-on/off control unit is an integral element of the component. It only requires an external power supply and its control functions are conveniently accessed through optical fiber connections. The device's control power consumption typically ranges from 10 - 100 W.

IGBT power modules are available from 1700 to 6500 volt as single, dual / phase-leg, chopper IGBT and dual diode modules.

The high-power HiPak IGBT modules feature low losses combined with soft-switching performance and record-breaking Safe Operating Area (SOA).

The newly introduced 62Pak and LoPak fast switching medium-power IGBT modules feature lowest switching losses, full 175 ℃ operation with full square SOA and standard package allowing drop-in replacement.

High-power thyristors are used in applications ranging from 100 kW soft starters up to HVDC stations rated 8 to 10 GW.

Besides commonly being used at line frequency, they are also found in kilohertz range applications like induction heating. Such applications can take advantage from devices where multiple functionalities are integrated in a single housing, like the integration of a diode and a thyristor or two antiparallel thyristors.

Thyristors are typically used as phase-controlled current valves for AC to DC conversion and vice versa, operating at low frequencies (most often around AC line frequency). In the conducting state, thyristors feature very low losses, making them attractive devices to efficiently control very high currents and energies.

All Hitachi Energy thyristors are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the thyristor terminals.

Thyristors are typically used as phase-controlled current valves for AC to DC conversion and vice versa, operating at low frequencies (most often around AC line frequency). In the conducting state, thyristors feature very low losses, making them attractive devices to efficiently control very high currents and energies.

All Hitachi Energy thyristors are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the thyristor terminals.

• Low switching losses
• Short turn-off time
• Fast turn-on and increased di/dt capability
• High operating frequency, up to 10kHz
• Suitable for power switching applications and induction heating

• Monolithic integrated freewheeling diode.
• Optimized for low dynamic losses.

Offers a wide range of fast recovery diodes, standard recovery diodes and welding diodes.

Devices features:

• 32 up to 144 mm wafer
• 175 A up to 13500 A
• 200 V up to 8500 V
• Free floating, LTB and alloyed technology

Typical diode applications:

• Drives
• Neutral Point Clamp Diodes (NPC)
• Input rectifiers for AC-drives
• Metals melting and electrolysis

Diodes can be subdivided into two main classes: Rectifier diodes (standard recovery) and fast diodes. Rectifier diodes are generally used for conversion of AC (alternating current) to DC (direct current). While optimized for low conduction losses, Rectifier diodes withstand only moderate dynamic stress in transition from conducting to the blocking state.

Fast diodes, on the other hand, are companion devices to switches in DC to AC conversion. Every switch (GTO, IGCT or IGBT) requires a complementary diode (e.g. for "free-wheeling" reactive power) in order to enable operation of the DC-AC conversion system with inductive loads.

Fast diodes are optimized to accept high dynamic stress (fast transition from conducting to blocking state). However, they generally have higher conduction losses than rectifier diodes. For every switch family (GTO, IGCT and IGBT), we offer fast diodes that are optimized for the switch application.

Diodes can be subdivided into two main classes: Rectifier diodes and fast diodes. Rectifier diodes are split into two sub-classes: Standard rectifier diodes and avalanche diodes. Rectifier diodes are generally used for conversion of AC (alternating current) to DC (direct current).

Standard rectifier diodes are optimized with respect to low conduction losses and are able to handle very large currents.

Avalanche diodes are self protected against transient over-voltages.

Welding diodes are designed for medium and high frequency welding equipment and optimized for high current rectifiers. The on-state voltage is very low and the output current is high.

Hitachi Energy is selling both normal housed and housing-less welding diodes. The latter is becoming more and more important in high current welding applications for joining of high refractory materials.

Production of GTOs commenced in the mid 1980s. A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.

GTOs are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches.

Typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor.

Diode and thyristor modules feature industry standard housings and very low losses together with the highest operating temperatures.

They provide the ultimate in reliability and are the epitome of quality. Whether efficiently driving industrial motors, smoothly accelerating fans and pumps, or supply power to demanding applications.

• High thermal fatigue durability
• High speed and low loss IGBT module
• Low noise due to soft and fast recovery diode
• Low driving power due to low input capacitance MOS gate
• High reliability, high durability module
• Isolated heatsink between terminals and base